To provide a producing method of a semiconductor device using an adhesive film for a semiconductor superior in reflow resistance, in which the adhesive film has a good padding performance to a supporting member for loading the semiconductor element having a substrate level difference between the semiconductor element and an organic substrate, and permits to adhere at a low temperature.
This adhesive film for the semiconductor is formed from a resin composition comprising an acrylate copolymer, a polyfunctional epoxy compound, a hardener, and a trisubstituted phosphoniophenolate or its salt. As the adhesive film comprises the acrylate copolymer that enhances adhesion at a low temperature, the hardener for the polyfunctional epoxy resin and the trisubstituted phosphoniophenolate or its salt as an accelerator for the epoxy resin, the adhesive film can have both adhesiveness and flowability after heat history. The semiconductor element and the supporting member for loading it are bonded using the adhesive film.
NAKAGAWA DAISUKE
JP2002180021A | 2002-06-26 | |||
JP2004176039A | 2004-06-24 |
WO2001060938A1 | 2001-08-23 |