PURPOSE: To enable the visual adjustment to be performed by a method wherein an electron beam detecting means quadratically detecting the intensity of photoelectrons on the surface held by the surface of a wafer in case of exposure is arranged to examine the transfer images of alignment patterns by displaying means displaying the detected images.
CONSTITUTION: An electron beam detecting means 10 and a displaying means 20 are visually examined using transfer images 10b as magnified visible images. When an irradiating position of an alignment light source 8b slips from alignment patterns 4b, the intensity of photoelectrons Eb is decreased to subdue the brightness of the transfer images 10b. Consequently, the irradiating position of the alignment light source 8b can be visually adjusted by examining the brightness of the transfer images 10b. Furthermore, the electron beam detecting means 10 detects the photoelectrons Eb on the surface held by a wafer surface in case of exposure so that the distinction of the transfer images 10b may coincide with that of the transfer images 10b during the exposure process. Through these procedures, the focus of image-formation can be visually adjusted by examining the distinction of the transfer images 10b.
| JPS61252635 | SEPARATING METHOD FOR WAFER AND MASK |
| JPS59165420 | MASK ALIGNMENT FOR EXPOSURE USED FOR PHOTO-ETCHING AND EXPOSING MASK |
| JP2003029414 | EXPOSURE DEVICE |
Yamada, Akio
Kudo, Jinko
Yasuda, Hiroshi
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