Title:
ALIGNING METHOD FOR SEMICONDUCTOR CRYSTAL SUBSTRATE
Document Type and Number:
Japanese Patent JPH065483
Kind Code:
A
Abstract:
PURPOSE: To enable precise position alignment of the crystallographic axis orientation of a semiconductor crystal substrate and a process pattern.
CONSTITUTION: An insulating mask 11 having a circular apeature 12 is formed on a semiconductor single crystal substrate 1. By anisotropic etching, an alignment mark 13 wherein the crystallographic axis orientation can be directly confirmed by visual observation is formed on the semiconductor single crystal substrate 1. A mask pattern 3 is made to coincide with the alignment mark 13. Thereby the precise position alignment of the crystallographic axis orientation of the substrate 1 and the mask pattern 3 is enabled.
Inventors:
MURAKAMI TOMOAKI
Application Number:
JP18601092A
Publication Date:
January 14, 1994
Filing Date:
June 19, 1992
Export Citation:
Assignee:
OKI SHISUTETSUKU TOKAI KK
OKI ELECTRIC IND CO LTD
OKI ELECTRIC IND CO LTD
International Classes:
G03F9/00; H01L21/02; H01L21/027; H01L21/68; H01L29/84; (IPC1-7): H01L21/02; G03F9/00; H01L21/027; H01L21/68; H01L29/84
Attorney, Agent or Firm:
Funabashi Kuninori
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