To perform alignment of each shot region in a highly precise manner using statistical process, even when the amount of partial positional deviation is different in the entire shot region on a wafer.

Shot regions SA(i, j) are arranged in a plurality of rows 31A to 31D on the wafer W to be exposed, and a circuit pattern and a wafer mark WM are formed in each shot region. A scaling Mx to the arrangement direction of each row and the rotation θ of each row are set in common with the entire surface of the wafer W as the parameter to be used for the transformation of arrangement coordinate of design, and offsets (ΔX1, ΔY1) to (ΔX4, ΔY4) are set for each row independently. The coordinates of wafer mark of the two shot regions selected from the rows 31A to 31D are measured, and the values of those parameters are determined by the method of least squares, using the result of the measurement.