PURPOSE: To form an aluminum alloy wiring having excellent electromigration characteristics by a method wherein an aluminum alloy thin film is formed on a substrate by conducting a CVD method using aluminum alkoxide and an alkoxide compound as raw gas.

CONSTITUTION: The aluminum alloy wiring of a semiconductor device is formed on a semiconductor substrate or an insulative substrate. At that time, an aluminum alloy thin film is formed on the substrate by conducting a CVD method using the metal alkoxide compound M(OR)n containing an alloy element which will be alloyed with aluminum alkoxide Al(OR)n and aluminum. R indicates the alkyl radical such as CH3-, C2H5- and C3H7 and the like. M indicates the metal such as As, B, Be, Bi, Ce, Hf and the like. As a result, the aluminum alloy wiring having excellent electromigration characteristics can be formed.