Title:
SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3139678
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the occurrence of cracks in an insulating film which functions as an etching stopper without inhibiting the accomplishment of the purpose of a hydrogen annealing process which is executed after the formation of memory cells.
SOLUTION: After a plurality of charge storage electrodes 11 spaced apart from each other is formed on an interlayer insulating film 3 formed on a silicon substrate 1, silicon nitride spacers 10 which respectively encircle the electrodes 11 are formed separately from each other. A capacitor insulating film 12 is formed along the exposed surfaces of the electrodes 11 and spacers 10 and counter electrodes 13 are formed on the spacers 10. Each spacer 10 is composed of a silicon nitride film which functions as the etching stopper of the interlayer insulating film 3.
Inventors:
Masato Sakao
Application Number:
JP31721498A
Publication Date:
March 05, 2001
Filing Date:
November 09, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L27/108; H01L21/02; H01L21/8242; H01L27/10; (IPC1-7): H01L27/108; H01L21/8242
Domestic Patent References:
| JP10321815A | ||||
| JP4318963A | ||||
| JP9260605A | ||||
| JP4340270A |
Attorney, Agent or Firm:
Katsufumi Izumi