Title:
ALUMINUM NITRIDE, FIELD EFFECT TRANSISTOR OF ALUMINUM OXIDE/ALUMINUM NITRIDE HETERO-STRUCTURE GATE DIELECTRIC STACK BASE, AND METHOD OF FORMING THE SAME
Document Type and Number:
Japanese Patent JP2002246594
Kind Code:
A
Abstract:
To provide a method and structure for using a thin gate dielectric substance in a semiconductor device, such as a field effect transistor, etc.
The structure (for example, a field effect transistor) and a method for manufacturing the structure are provided with a substrate having a source region, a drain region, and a channel region provided between the source and drain regions, an insulating layer arranged on the channel region, and a gate electrode arranged on the insulating layer. The insulating layer includes an aluminum nitride-containing layer arranged on the channel region.
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Inventors:
BOJARCZUK NESTOR A JR
CARTIER EDUARD
GUHA SUPRATIK
RAGNARSSON LARS-AKE
CARTIER EDUARD
GUHA SUPRATIK
RAGNARSSON LARS-AKE
Application Number:
JP2001388832A
Publication Date:
August 30, 2002
Filing Date:
December 21, 2001
Export Citation:
Assignee:
IBM
International Classes:
H01L29/78; H01L21/28; H01L21/316; H01L21/318; H01L29/51; (IPC1-7): H01L29/78; H01L21/316; H01L21/318
Attorney, Agent or Firm:
Hiroshi Sakaguchi (2 outside)