Title:
ALUMINUM NITRIDE SINTERED COMPACT
Document Type and Number:
Japanese Patent JPH06116039
Kind Code:
A
Abstract:
PURPOSE: To impart high heat conductivity to a sintered compact and also to inhibit the surface of the sintered compact from becoming stained and irregular in color by using aluminum nitride as a base and erbium oxide as a sintering aid and controlling the total amt. of oxygen in the sintered compact.
CONSTITUTION: This aluminum nitride sintered compact consists essentially of aluminum nitride and contains ≥5wt.% (expressed in terms of metal) erbium. The weight ratio of oxygen contained in this sintered compact to erbium is ≥0.287. The grain boundaries of the principal crystal phase made of AlN are made of perovskite type crystals and/or garnet type crystals and a monoclinic crystal phase does not practically exist.
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Inventors:
YOMO KUNIHIDE
HASEGAWA TOMOHIDE
IKEDA SHIN
HASEGAWA TOMOHIDE
IKEDA SHIN
Application Number:
JP25947192A
Publication Date:
April 26, 1994
Filing Date:
September 29, 1992
Export Citation:
Assignee:
KYOCERA CORP
International Classes:
C04B35/581; H05K1/03; (IPC1-7): C04B35/58