Title:
ALUMINUM NITRIDE SUBSTRATE AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3486917
Kind Code:
B2
Abstract:
PURPOSE: To obtain an aluminum nitride substrate having improved strength and corrosion resistance while keeping high thermal conductivity by reinforcing the grain boundary near the surface of the aluminum nitride substrate and to provide a process for the production of the aluminum nitride substrate.
CONSTITUTION: This aluminum nitride substrate has a surface layer 12 composed of aluminum oxynitride extending from the surface of the substrate to the depth of 10-100μm and a reinforced layer 18 containing aluminum oxynitride 16 in the grain boundary of crystal grains 14 of aluminum nitride from the lower surface of the surface layer 12 to the depth of about 200μm.
Inventors:
Takahiro Matsuura
Seiji Nakahata
Koichi Sokabe
Akira Yamakawa
Seiji Nakahata
Koichi Sokabe
Akira Yamakawa
Application Number:
JP15751293A
Publication Date:
January 13, 2004
Filing Date:
June 28, 1993
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
B32B18/00; C04B35/581; C04B35/64; C04B41/87; H01L23/15; H05K1/03; H05K3/38; (IPC1-7): C04B35/581; C04B41/87
Domestic Patent References:
| JP63303879A |
Attorney, Agent or Firm:
Minoru Nakano (3 outside)
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