Title:
ALUMINUM PRECURSOR, AND METHODS OF FORMING THIN FILM AND CAPACITOR USING THE SAME
Document Type and Number:
Japanese Patent JP2014165496
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an aluminum precursor with high thermal stability, and a thin film formation method and a capacitor formation method using the same.SOLUTION: An aluminum precursor is represented by the specified formula (1). The aluminum precursor can be used for easily forming a thin film in an opening having a high aspect ratio, and can be suitably used for forming a dielectric film of a capacitor.
Inventors:
YOUN SANG-CHUL
SAKURAI ATSUSHI
HATASE MASAKO
CHO YOUN JOUNG
KANG JI-NA
YAMADA NAOKI
CHOI JUNG-SIK
SAKURAI ATSUSHI
HATASE MASAKO
CHO YOUN JOUNG
KANG JI-NA
YAMADA NAOKI
CHOI JUNG-SIK
Application Number:
JP2014031269A
Publication Date:
September 08, 2014
Filing Date:
February 21, 2014
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
ADEKA CORP
ADEKA CORP
International Classes:
H01L21/316; C07C31/32; C07C49/92; C07F5/06; C23C16/18; C23C16/40; H01L21/8242; H01L27/108
Domestic Patent References:
| JP2010502541A | 2010-01-28 | |||
| JP2009088236A | 2009-04-23 | |||
| JP2004002864A | 2004-01-08 | |||
| JPH11500789A | 1999-01-19 | |||
| JP2004056142A | 2004-02-19 | |||
| JP2013089846A | 2013-05-13 | |||
| JP2014005242A | 2014-01-16 | |||
| JP2005534809A | 2005-11-17 |
Foreign References:
| WO2013105310A1 | 2013-07-18 |
Other References:
CHEMICAL VAPOR DEPOSITION, vol. 7, no. 2, JPN6015045016, 2001, pages 69 - 74
SURFACE AND COATINGS TECHNOLOGY, vol. Vol.160, No.2-3, JPN6015045017, 2002, pages 124 - 131
SURFACE AND COATINGS TECHNOLOGY, vol. Vol.160, No.2-3, JPN6015045017, 2002, pages 124 - 131
Attorney, Agent or Firm:
Patent business corporation symbiosis international patent firm