PURPOSE: To provide alumite film with capability of memorizing electronic beams and to expand its applications as memory element, by forming anodic- oxidized film on aluminum, etc. while being subjected to immersion in phosphoric acid, and thereafter vacuum-depositing highly conductive metal on the anodic-oxidized film which is heated and cooled beforehand.
CONSTITUTION: On aluminum or its alloy, being subjected to immersion in phosphoric acid, anodic-oxidized film is formed. After the film is heated, highly conductive metal is vacuum-deposited on the film. The irradiation of electronic beam onto the alumite film permits electrons beams to be implanted to microholes or barrier layer at the bottom of the microholes of the irradiated portion of alumite film, with a resulting phenomenon that the irradiated portion becomes less resistant electrically than the other portion. This reduction in electric resistance is utilized as memorizing capacity. This effect is reversible in that it disappears a few minutes after the cease of electronic beam irradiation and the original condition before irradiation comes back.
OOYAMA TADANORI
YAMASHITA MASASHI
HISAZOME KAZUYUKI
FUJIOKA SATOSHI
OOAKU NOBUHIRO
| JPS4928322A | 1974-03-13 | |||
| JPS58222453A | 1983-12-24 |