To provide a new amine compound which has high effect of preventing decrease in a resist film and also imparts good resolution and effect of enlarging a focus margin, and also provide a resist material containing the same and a method of producing a pattern using the resist material.
This amine compound is represented by formulas (1), (2), (3) and (4). [wherein, R1 represents a straight chain or branched 1-4C alkylene group; R2 represents H or a straight chain, branched or cyclic alkyl group and may include a hydroxy, ether, carbonyl or ester group, a lactone ring, a carbonate or a cyano group; R3 represents a straight chain or branched 2-20C alkylene group and may include a hydroxy, ether, thio-ether, carbonyl, ester or thio-ester group or a carbonate; R4 is the same or different and a straight chain or branched 1-4C alkylene group; a represents an integer of 1-3, and a+b=3].
KOBAYASHI TOMOHIRO
WATANABE TAKESHI
