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Title:
AMMONIA RECOVERY METHOD
Document Type and Number:
Japanese Patent JP2014118309
Kind Code:
A
Abstract:

To provide a method capable of efficiently and easily recovering ammonia from low ammonia concentration exhaust gas discharged from a manufacturing process of a gallium nitride-based compound semiconductor.

Exhaust gas containing ammonia, hydrogen, and nitrogen discharged from a manufacturing process of a gallium nitride-based compound semiconductor is brought into contact with a hydrogen separation membrane to remove a part of the hydrogen from the exhaust gas, and then the exhaust gas is subjected to cooling treatment using a heat pump to liquefy and recover the ammonia contained in the exhaust gas. Preferably, the hydrogen separation membrane is a palladium alloy membrane.


Inventors:
IZAKI HIROMASA
IWAKI MASANORI
AKIYAMA TOSHIO
Application Number:
JP2012272731A
Publication Date:
June 30, 2014
Filing Date:
December 13, 2012
Export Citation:
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Assignee:
JAPAN PIONICS
International Classes:
C01C1/12; B01D53/22; B01D53/52; B01D53/58; B01D71/02; C01B3/56
Domestic Patent References:
JP2007019052A2007-01-25
JPS6046918A1985-03-14
JP2008007378A2008-01-17
JP2007182359A2007-07-19
JP2011207672A2011-10-20