AMORPHOUS BORON NITRIDE THIN FILM DOPED WITH TERBIUM ION

Title:

AMORPHOUS BORON NITRIDE THIN FILM DOPED WITH TERBIUM ION

Document Type and Number:

Japanese Patent JP2003160784

Kind Code:

A

Abstract:

To provide a thin film for novel highly luminous light-emitting elements which is a substitute for RE-Si, RE-GaN, RE-AlN or RE-Si3N4 (wherein RE is a rare earth element).

A trivalent-terbium-ion (Tb3+)-doped amorphous boron nitride (BN) light-emitting thin film that enables a visible light emission about the central wavelength of 547 nm or a near-infrared light emission about the center wavelength of 1.3 μm is provided. The thin film is produced by sputtering a target being a terbium polyboride represented by TbBn (wherein n is in the range: 4≤n≤100) in an atmosphere formed by adding nitrogen (N2) or ammonia (NH3) to argon.

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Inventors:

RYU SENRIN
CHO TOMIYOSHI
TANAKA TAKAO
AIZAWA TAKASHI

Application Number:

JP2001359692A

Publication Date:

June 06, 2003

Filing Date:

November 26, 2001

Export Citation:

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Assignee:

NAT INST FOR MATERIALS SCIENCE

International Classes:

C09K11/63; C09K11/00; (IPC1-7): C09K11/63; C09K11/00

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