Title:
AMORPHOUS FERROELECTRIC OXIDE MATERIAL AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JPH05155617
Kind Code:
A
Abstract:
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc.
CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide having amorphous structure based on the oxide of a transition metal (M2O3), bismuth oxide (Bi2O3) and a Gd2(MoO4)3 type compd., [A2(BO4)3]. The M2O3 is at least one of the oxides of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zr, Nb, Mo, Pd, Hf, Ta, W, In and lanthanoids and the A2(BO4)3 is a Gd2(MoO4)3 type compd. having ferroelectricity, antiferroelectricity or paraelectricity. The diagram shows the pref. compsn. range of the ternary oxide.
Inventors:
FUJII TOSHITAKA
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI
Application Number:
JP34406291A
Publication Date:
June 22, 1993
Filing Date:
December 03, 1991
Export Citation:
Assignee:
UBE INDUSTRIES
International Classes:
C01B13/14; C01G1/00; H01B3/00; H01B3/12; H01G7/06; (IPC1-7): C01B13/14; C01G1/00; H01B3/00; H01B3/12; H01G7/06