PURPOSE: To realize ferroelectricity by using a ternary oxide essentially consisting of transition metallic oxide-Sb2O3-YMnO3 type compound and forming a thin film with an amorphous structure having a specified compsn. on a substrate at a prescribed temp. or below.
CONSTITUTION: Ternary oxide having a prescribed compsn. constituted of powdery mixture of M2O3 such as Fe2O3 of one or more kinds among transition metal oxide selected from the oxide of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zr, Nb, Mo, Pd, Hf, Ta, W, In and La series elements, Sb2O3 and ABO3 of a YMnO3 type compound such as YMnO3 is used as a sputtering target. The degree of vacuum in a sputtering apparatus is regulated to about ≤2×10-7Torr, and sputtering is executed to the surface of an Si substrate by using gaseous mixture Ar/O2 at ≤300°C substrate temp. to form a thin film having a compsn. in the area surrounded by α, β, γ, δ, and in the compsn. diagram, by which the amorphous ferroelectric oxide having high translucency is obtd.
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI
