PURPOSE: To provide the amorphous (amorphous) ferroelectric material, which can be used for a thin film-type capacitor element, a ferroelectric memory and an electro-optical device or the like, and the manufacture thereof.
CONSTITUTION: The amorphous ferroelectric oxide material is made of ternary oxide, which is mainly composed of transition metal oxide (M2O3)-germanium oxide (GeO2)-Gd2(MoO4)3 type compound A2(BO4)3, and this ternary oxide has the amorphous structure. Wherein, M2O3 means at least one kind selected among a group, which consists of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zr, Nb, Mo, Pd, Hf, Ta, W, In and the oxide of lanthanum elements, and A2(BO4)3 means Gd2(MoO4)3 type compound showing the ferrodielectricproperty, antiferrodielectricproperty or paradielectricproperty.
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI
