Title:
AMORPHOUS FERROELECTRIC OXIDE MATERIAL AND PRODUCTION THEREOF
Document Type and Number:
Japanese Patent JPH05139734
Kind Code:
A
Abstract:
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc.
CONSTITUTION: This amorphous ferroelectric oxide material is made of a ternary oxide having amorphous structure based on the oxide of a transition metal (M2O3), phosphorus oxide (P2O5) and a Pb5Ge3O11 type compd. (A5B3O11). The M2O3 is at least one of the oxides of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zr, Nb, Mo, Pd, Hf, Ta, W, In and lanthanoids and the A5B3O11 is a Pb5Ge3O11 type compd. having ferroelectricity, antiferroelectricity or paraelectricity.
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Inventors:
FUJII HISATAKA
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI
Application Number:
JP32664691A
Publication Date:
June 08, 1993
Filing Date:
November 15, 1991
Export Citation:
Assignee:
UBE INDUSTRIES
International Classes:
C01G1/00; H01B3/00; H01B3/12; H01G4/12; H01G7/06; (IPC1-7): C01G1/00; H01B3/00; H01B3/12; H01G4/12; H01G7/06