AMORPHOUS FERROELECTRIC OXIDE MATERIAL AND PRODUCTION THEREOF

Title:

AMORPHOUS FERROELECTRIC OXIDE MATERIAL AND PRODUCTION THEREOF

Document Type and Number:

Japanese Patent JPH0517113

Kind Code:

A

Abstract:

PURPOSE: To provide an amorphous ferroelectric material capable of being applied to thin filmy capacitor elements, ferroelectric memories, optoelectric devices, etc., and a method for producing the same.

CONSTITUTION: The objective material is characterized by comprising a ternary system oxide containing a transition metal oxide (M2O3)-phosphorus oxide (P2O3)- LiNbO3 compound (ABO3) as a main component, the ternary system oxide having an amorphous structure. (Wherein M2O3 is at least one selected from the oxides of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zr, Nb, Mo, Pd, Hf, Ta, W, In and lanthanum elements; ABO3 is a ferroelectric, antiferroelectric or paraelectric LiNbO3 type compound).

Inventors:

FUJII HISATAKA
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI

Application Number:

JP19728891A

Publication Date:

January 26, 1993

Filing Date:

July 12, 1991

Export Citation:

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Assignee:

UBE INDUSTRIES

International Classes:

C01B25/45; H01B3/12; H01G7/06; (IPC1-7): C01B25/45; H01B3/12; H01G7/06

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