Title:
AMORPHOUS FERROELECTRIC SUBSTANCE OXIDE MATERIAL AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH05135622
Kind Code:
A
Abstract:
PURPOSE: To provide a noncrystal (amorphous) ferroelectric substance material applicable to a thin-film type capacitor element and a manufacturing method thereof.
CONSTITUTION: The amorphous ferroelectric substance oxide material is made up of a teroxide mainly composed of transition metal oxide (M2O3)-silicon oxide (SiO3)-SrTeO3 type compound (ABO,), and is characterized by the teroxide having an amorphous structure, where M2O3 is at least one selected from a group made up of oxides of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zr, Nb, Mo, Pd, Hf, Ta, W, In and lanthanum series elements, and ABO3 is an SrTeO3 type compound which indicates ferroelectricity, anti-ferroelectricity or paraelectricity.
Inventors:
FUJII HISATAKA
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI
KASHIMA ATSUSHI
FUJII KAZUHIRO
OKAMOTO IWAO
FUTAI HIROYUKI
Application Number:
JP32233291A
Publication Date:
June 01, 1993
Filing Date:
November 12, 1991
Export Citation:
Assignee:
UBE INDUSTRIES
International Classes:
C03C3/062; C03C3/076; C03C4/16; H01B3/12; H01G7/06; (IPC1-7): C03C3/062; C03C3/076; C03C4/16; H01B3/12; H01G7/06