AMORPHOUS PHOTOVOLTAIC DEVICE

Japanese Patent JPS62193287

A

PURPOSE:To form the titled device efficiently without needing a process for forming the surface irregularity of a transparent electrode and so on and get the device to have a high photoelectric conversion efficiency by a method wherein the substrate side surface of an amorphous semiconductor thin film is made smooth and the opposite side surface irregular. CONSTITUTION:A transparent electrode 2 consisting of a light-transmitting conductive oxide is formed on a transparent substrate 1, a PIN junction type amorphous semiconductor thin film 6 is formed thereon and a back electrode 7 consisting of such a metal as Al is formed thereon. This amorphous semiconductor thin film 6 is one bonded a P-type layer 3, an I-type layer 4 and an N-type layer 5 together, the substrate side surface 8 of this thin film 6 is formed into a smooth surface and the opposite side surface 9 is formed into an irregular surface. The semiconductor thin film 6 of such a singular form can be formed by a method that the conditions at the time it is formed by a plasma CVD method are temporarily modified on the en route process and the formation of surface irregularity is performed during the film formation. Thereby, in case a light is incided through the substrate side, the photoelectric conversion efficiency can be improved chiefly by the improvement of the FF and in case the light is incided through the opposite side, the photoelectric conversion efficiency can be improved by the improvement of the Isc along with the improvement of the FF.

WATANABE KANEO
NAKAJIMA YUKIO
HAKU HISAO
MATSUOKA TSUGIFUMI

JP3567786A

August 25, 1987

February 20, 1986

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SANYO ELECTRIC CO

H01L31/0236; H01L31/04; H01L31/06; H01L31/075; (IPC1-7): H01L31/04

JPS59224183A

1984-12-17

Shiro Nakajima

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