Title:
AMORPHOUS SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH04253377
Kind Code:
A
Abstract:
PURPOSE:To provide means for solving optical deterioration of an amorphous solar cell which employs an amorphous semiconductor element and particularly amorphous silicon series as a main material. CONSTITUTION:An amorphous silicon alloy film having 3.2 or less of a refractive index is used as an i-type layer. In order to form such a film, the film may be formed of inert gas such as Xe, Kr, Ar, Ne, He, etc., as dilute gas for SiH4 gas. Heretofore, optical deterioration of an amorphous solar cell can be remarkably reduced without impairing initial characteristics, which has been very difficult so far.
Inventors:
SANNOMIYA HITOSHI
ITO MANABU
INOUE YASUYOSHI
YOKOTA AKITOSHI
NOMOTO KATSUHIKO
NAKADA YUKIHIKO
ITO MANABU
INOUE YASUYOSHI
YOKOTA AKITOSHI
NOMOTO KATSUHIKO
NAKADA YUKIHIKO
Application Number:
JP896491A
Publication Date:
September 09, 1992
Filing Date:
January 29, 1991
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L31/04; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Umeda Masaru