AMORPHOUS SEMICONDUCTOR ELEMENT

Title:

AMORPHOUS SEMICONDUCTOR ELEMENT

Document Type and Number:

Japanese Patent JPS6132481

Kind Code:

A

Abstract:

PURPOSE:To enable the titled element of free shape and size to be formed at low cost by a method wherein amorphous Si films are formed on a substrate in the order of P-I-N-I-P or N-I-P-I-N, and electrodes are led out of P- and N- layers of the uppermost, intermediate, and lowermost layers. CONSTITUTION:Above a metallic substrate 11, a boron-doped a-Si P-layer 12, an a-Si I-layer 13 non-doped or doped with a small amount of boron, a phosphorus-doped a Si N-layer 14, an a-Si I-layer 15 non-doped or doped with a small amount of boron, a boron-doped a-Si P-layer 16, and a clear conductive film 17 formed out of Ind oxide, Sn oxide, or Ind-Sn oxide (In2O3+SnO2, SnO2<=10%) are formed by lamination in this order. Then, the construction is so made that an electrode I is led out of the clear conductive film 17 of the uppermost layer, electrode II out of the a-Si N-layer 14 of the intermediate layer, and electrode IIIout of the metallic substrate 11 that is in contact with the a-Si P-layer 12 of the lowermost layer.

Inventors:

SANNOMIYA HITOSHI
HIJIKIGAWA MASAYA

Application Number:

JP15458784A

Publication Date:

February 15, 1986

Filing Date:

July 24, 1984

Export Citation:

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