Title:
AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC CELL
Document Type and Number:
Japanese Patent JPS5661174
Kind Code:
A
Abstract:
PURPOSE:To obtain a higher open-circuit voltage by forming a hetero junction photovoltaic cell unit comprising a low-resistivity amorphous semiconductor layer having first conductive type, a high-resistivity or intrinsic amorphous semiconductor layer, and a same conductive-type semiconductor layer of a different kind from them, and forming a composite structure of a plurality of said units. CONSTITUTION:On a substrate 1 of stainless steel or the like, a composite structure comprising an N type low-resistivity amorphous semiconductor layer 2 and an N type high-resistivity or intrinsic amorphous semiconductor layer 3 is grown, which is coated with an N type different-kind semiconductor layer 4 of SnO2 or In.Sn oxide to form a photovoltaic cell unit. Then, a desired number of such units each having all the layers 2, 3 and 4 except the substrate 1 are formed into a composite structure, and a lattice electrode 5 is provided on the layer 4 of the uppermost unit. Connecting the photovoltaic cell units in series permits the generation of a higher open-circuit voltage multiplied by the number of the hetero junctions between the electrode 5 and the substrate 1.
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Inventors:
SAGA MISAO
ICHIMURA TAKESHIGE
ICHIMURA TAKESHIGE
Application Number:
JP13741579A
Publication Date:
May 26, 1981
Filing Date:
October 24, 1979
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L31/04; H01L31/06; H01L31/075; (IPC1-7): H01L31/04