Title:
AMORPHOUS SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3143274
Kind Code:
B2
Abstract:
PURPOSE: To remarkably restrain optical deterioration by making the ratio of free bond terminal elements bonded to main material elements to the total amount of the elements contained in amorphous semiconductor, smaller than or equal to a specified value.
CONSTITUTION: The ratio of free bond terminal elements bonded to main material elements to the total amount of the elements contained in amorphous semiconductor is made smaller than or equal to 0.7. The free bond terminal elements like hydrogen contained in amorphous semiconductor move as diffusion, when the elements are bonded to the main material. New free bonds are generated by the movement. The movement of the free bond terminal elements bonded to the main material elements is restrained by increasing component of elements introduced for the free bond terminal which component does not directly contribute to the free bond terminal. Thereby the stability to light can be remarkably improved.
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Inventors:
Katsunobu Sayama
Application Number:
JP18961593A
Publication Date:
March 07, 2001
Filing Date:
July 30, 1993
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L21/205; H01L31/04; (IPC1-7): H01L21/205; H01L31/04
Domestic Patent References:
| JP582456A | ||||
| JP3217014A | ||||
| JP3224214A | ||||
| JP4354326A | ||||
| JP62237767A |
Attorney, Agent or Firm:
Yoshito Yamada
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