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Patent Searching and Data


Title:
AMORPHOUS SI SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS60117682
Kind Code:
A
Abstract:
PURPOSE:To prevent electrodes from oxidation and separation, and thereby to control deterioration with time of electric characteristics, by a method wherein an insulating film composed of Si and C is formed on a flexible and heat-resisting substrate and, on said insulating film, electrodes and an amorphous Si film is formed. CONSTITUTION:An SiC film 3 with high electric resistance is formed by sputtering on a resin film 2 deposited on a stainless steel substrate 1. Stainless steel is sputtered onto the SiC film 3 for the formation of lower electrodes 4a, 4b, 4c, 4d, 4e with a prescribed separation between them. Next, by means of plasma CVD, an amorphous Si film 5 for photoelectric conversion in the order of P, I, N or N, I, P. Above the lower electrodes 4a, 4b, 4c, 4d, 4e, light-transmitting upper electrodes 6a, 6b, 6c, 6d, 6e are built by sputtering In2O3-SnO2, with the amorphous Si film 5 lying between the two groups of lower and upper electrodes. Finally, a passivation SiO2 film 7 is formed by sputtering to cover the upper electrodes 6a, 6b, 6c, 6d, 6e for the completion of five amorphous Si solar cells combined in series.

Inventors:
KAWASAKI HIROSHI
KUMADA SEIJI
TANABE HIDEO
YUHARA KATSUO
MISUMI AKIRA
Application Number:
JP22410983A
Publication Date:
June 25, 1985
Filing Date:
November 30, 1983
Export Citation:
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Assignee:
HITACHI LTD
HITACHI DEVICE ENG
International Classes:
H01L31/04; H01L27/142; H01L31/0392; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Akio Takahashi