Title:
AMORPHOUS SILICON FIELD EFFECT TRANSISTOR, METHOD OF PRODUCING SAME AND LIQUID CRYSTAL DISPLAY UNIT ADDRESSED THEREBY
Document Type and Number:
Japanese Patent JPS60217669
Kind Code:
A
Abstract:
@ An a-Si FET comprising electrically conductive source and drain regions 25, 26 supported by an insulating substrate 21; a layer of amorphous silicon 28 which is separately deposited in a space between said source and drain regions 25, 26 so as to engage the source and drain regions; source and drain electrodes 23, 24 electrically connected with said source and drain regions respectively; a gate electrode 20 disposed adjacent said layer of amorphous silicon; and an insulating layer 22 separating the gate electrode from the amorphous silicon layer; the arrangememt being such that, in the ON state of the FET, a direct current-path 27-27' is established in the layer of amorphous silicon which is disposed in said space. A low cost, low- temperature substrate such as soda glass may be used and the a-Si FET may be of the thin film type. Such an a-Si FET can be used in an LCD device which is addressed using one or more of the FET's.
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Inventors:
SAIMON NIKORASU KUROOSAA
Application Number:
JP4496885A
Publication Date:
October 31, 1985
Filing Date:
March 08, 1985
Export Citation:
Assignee:
LUCAS INDUSTRIES LTD
International Classes:
H01L29/78; G02F1/136; G02F1/1368; H01L21/77; H01L21/84; H01L27/12; H01L29/786; (IPC1-7): G02F1/133; G09F9/35; H01L27/12; H01L29/78
Attorney, Agent or Firm:
Hideo Takino