PURPOSE: To obtain a photoconductor layer for use in an electrophotographic receptor enhanced in sensitivity and dark resistance, by adding a specified amount of hydrogen to an amorphous silicon layer, and regulating the absorption coefficient ratio of the absorption peaks in specified infrared absorption spectra.
CONSTITUTION: A glow discharge decomposition device or the like, hydrogen as a carrier gas, and 0.3W3KW high frequency power are used, and gaseous SiH4, when needed, oxygen, and gaseous impurities of the group IIIA are decomposed to form an amorphous silicon (a-Si) photoconductor layer containing at least 10W 40 atomic % hydrogen, when needed, a slight amount of oxygen, and the impurities of the group IIIA on a substrate. This a-Si layer has the 0.2W1.7 absorption coefficient ratio of the peaks at 2,100-1 and 2,000cm-1 of infrared absorption spectra, thus permitting an electrophotographic photoconductor enhanced in sensitivity, dark resistance, manufacture reproducibility, and stability to be obtained.
YOSHIDA MASAZUMI
KAWAMURA TAKAO
KYOTO CERAMIC