Title:
AMORPHOUS SILICON SENSOR
Document Type and Number:
Japanese Patent JPH04251988
Kind Code:
A
Abstract:
PURPOSE: To obtain an indeterminate shape silicon optical sensor exhibiting a low dark current. CONSTITUTION: The optical sensor comprises a doped hydrogenated indeterminate shape silicon layer 14 and a doped hydrogenated indeterminate shape silicon layer 12 sandwiched by conductive layers 16, 18. It is annealed in hydrogen atmosphere and exhibits a low dark current and especially useful as an X-ray image sensor added with a luminescence layer 24 containing at least one kind of X-ray phosphor.
Inventors:
NANGU TORI TORAN
FURANKO ANTONIO MORI
UIRIAMU CHIYAARUZU TEITO
FURANKO ANTONIO MORI
UIRIAMU CHIYAARUZU TEITO
Application Number:
JP40673590A
Publication Date:
September 08, 1992
Filing Date:
December 26, 1990
Export Citation:
Assignee:
MINNESOTA MINING & MFG
International Classes:
H01L31/09; H01L31/0232; H01L31/108; H01L31/115; H01L31/20; (IPC1-7): H01L31/09; H01L31/108
Attorney, Agent or Firm:
Akira Asamura (3 outside)
Previous Patent: OPTOELECTRONIC IC AND ITS MANUFACTURE
Next Patent: ELECTRIC DRIVE FOR SEGMENTED TRANSDUCER USE
Next Patent: ELECTRIC DRIVE FOR SEGMENTED TRANSDUCER USE