Title:
AMORPHOUS SILICON SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS58209169
Kind Code:
A
Abstract:
PURPOSE:To prevent Al from diffusion into Si layer whle improving the performance of a solar battery by a method wherein, when the first elctrode made of transparent conductive film, an amorphous Si layer with P-N junction and an Al second electrode are provided on a transparent insulated substrate to produce a solar battery, a primer film such as Mo, etc. with specified thickness and low contact resistance is laid between the second electrode and the Si layer. CONSTITUTION:A glass-made insulated substrate 21 is firstly coated with a transparent oxide InSn layer 22 to be the first electrode around 1,000Angstrom thick by means of electronic beam evaporation etc. and then an amorphous Si layer 23 is laminated on the layer 22 by means of glow discharge decomposition process. Said layer 23 comprises a P type layer around 150Angstrom thick, an I type layer around 5,000Angstrom thick and an N type layer around 500Angstrom thick. Next, an Al second electrode 24 is provided on said layer 23, however a metallic layer 25 not exceeding 1,000Angstrom thick comprising Mo, Ti, W, Ta etc. as a primer layer is laid between said electrode 24 and said layer 23. Through these procedures, the contact resistance between the Al electrode 24 and the Si layer 23 may be reduced preventing Al from diffusing into the Si layer 23.
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Inventors:
HATAYAMA TAMOTSU
NOZAKI HIDETOSHI
KAMIMURA TAKAAKI
UTAGAWA TADASHI
KATOU CHIHARU
NOZAKI HIDETOSHI
KAMIMURA TAKAAKI
UTAGAWA TADASHI
KATOU CHIHARU
Application Number:
JP9287082A
Publication Date:
December 06, 1983
Filing Date:
May 31, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L31/04; H01L31/0224; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Takehiko Suzue