To discharge signal charge in resetting even if a pixel size is reduced by enhancing a pixel density.

Each p type field absorbing layer 11 is disposed adjacent to a drain 28 of a MOS transistor 25. When a light (h) is incident through a first gate electrode 29, electron-hole pair is generated by photoelectric conversion, and electrons are fed to the drain 28. The holes are confined by barrier formed at an intermediate of an n type semiconductor well layer 33 and barrier under the electrode 29, stored in a semiconductor-insulating film interface of the layer 33 to become signal charge. A potential of the layer 33 is changed in response to an amount of the charge. The change of the potential is read as a potential change of a source 27. At the time of resetting, potential barrier under an electrode 26 is drawn down, and the charge is discharged to a p type semiconductor substrate 31 via a path shown by a broken line.