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Title:
ANALYZER FOR DEFECT OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH06151543
Kind Code:
A
Abstract:

PURPOSE: To detect a hot-carrier generation point precisely using an LSI tester, by transmitting a timing signal for picking up a fine luminous fail-point image to an image input unit while a testing signal is repeated from a first point to a fail point.

CONSTITUTION: An LSI tester 200 detects a fail point(FP) as a different point between an expected output value 520 estimated from a testing signal of a normal semiconductor device 500 and an observed output value 510 of a semiconductor device 500 to be measured. While a testing signal 221 is repeated from a first point to the fail point(FP), an image timing signal 130 is transmitted to a photon-counting camera head 120 at an imaging input unit 100 so that a very small luminous image is taken only at the fail point(FP). Consequently, a hot-carrier generation point can be detected for a short time without holding the testing signal 221.


Inventors:
IMATAKI TOMOO
SUZUKI MAMORU
Application Number:
JP32892792A
Publication Date:
May 31, 1994
Filing Date:
November 13, 1992
Export Citation:
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Assignee:
SHARP KK
International Classes:
H01L21/66; G01R31/302; (IPC1-7): H01L21/66; G01R31/302
Attorney, Agent or Firm:
Koji Onishi