Title:
ANNEALING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP2018206925
Kind Code:
A
Abstract:
To provide an annealing device in which the temperature difference in a furnace can be reduced.SOLUTION: An annealing device includes a first furnace body and a second furnace body that is located inside the first furnace body and capable of holding at least one sheet of wafer. The first furnace body is heated by heating means, and the second furnace body is heated by radiation from the first furnace body.SELECTED DRAWING: Figure 1
Inventors:
NISHIHARA SADATAKA
Application Number:
JP2017110328A
Publication Date:
December 27, 2018
Filing Date:
June 02, 2017
Export Citation:
Assignee:
SHOWA DENKO KK
International Classes:
H01L21/324; C30B29/36; F27D11/06; H01L21/26; H01L21/265
Domestic Patent References:
| JP2010056183A | 2010-03-11 | |||
| JP2009231341A | 2009-10-08 | |||
| JP2007158123A | 2007-06-21 | |||
| JP2002208591A | 2002-07-26 | |||
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| JPH0669144A | 1994-03-11 | |||
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| JP2012109520A | 2012-06-07 | |||
| JP2003297544A | 2003-10-17 |
Attorney, Agent or Firm:
Masatake Shiga
Suzuki Mitsuyoshi
Norihiko Ara
Suzuki Mitsuyoshi
Norihiko Ara