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Title:
MBE成長によるアンチモン化アルカリ光電陰極
Document Type and Number:
Japanese Patent JP4740853
Kind Code:
B2
Abstract:
A photocathode manufacturing intermediary article ( 24 ) includes a substrate layer ( 26 ), and an active layer ( 20 ) that is carried by the substrate layer ( 26 ). The active layer ( 20 ) includes photoemissive alkali antimonide material that is epitaxially grown on the substrate ( 26 ).

Inventors:
Grosser, Robert
Estrela, Joseph
Bule, Roig
Application Number:
JP2006526441A
Publication Date:
August 03, 2011
Filing Date:
September 14, 2004
Export Citation:
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Assignee:
Lytton Systems, Inc.
International Classes:
H01J9/12; H01J40/06; H01J40/16; H01J
Domestic Patent References:
JP2001202873A
JP5266857A
JP6119872A
JP58085244A
JP2001236877A
Other References:
"Modelling of the alkali vapour-pressure dynamics during the epitaxial growth of semi-transparent photo-emissive layers",Vacuum,2002年 9月13日,Vol. 67,p. 235-241
"Photoemission spectroscopy study of the charge accumulation at the K3Sb:Cs surface",Applied Surface Science,2001年 5月15日,Vols. 175-176,p. 101-104
Attorney, Agent or Firm:
Akira Hori



 
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