Title:
反射防止膜用組成物、反射防止膜の製造方法、および半導体素子
Document Type and Number:
Japanese Patent JP4121683
Kind Code:
B2
Abstract:
Polymers are provided having the following formulas I and II:Polymers of the present invention can be used to provide an anti-reflective coating (ARC) material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain chromophore substituents which exhibit sufficient absorbance at wavelengths useful for such submicrolithography process. The ARC prevents back reflection from the surface of or lower layers in the semiconductor devices and solves the problem of the CD being altered by the diffracted and reflected light from such lower layers.
Inventors:
Jun Min Ho
Hong Seung Yun
Bakukiho
Hong Seung Yun
Bakukiho
Application Number:
JP35449299A
Publication Date:
July 23, 2008
Filing Date:
December 14, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07C67/14; C07C69/00; C08F20/12; C07C69/54; C07C69/657; C08F12/32; C08F18/16; C08F20/14; C08F220/14; C08F220/18; C08F220/26; C08F220/28; C08F220/30; C08F220/32; C09D5/32; C09D5/33; C09D133/06; C09D133/14; G03C5/00; G03F7/00; G03F7/004; G03F7/11; H01L21/31; H01L21/314; H01L21/469; H01L23/29; H01L21/027; H01L21/312; C09K; H01L
Domestic Patent References:
| JP7316268A | ||||
| JP10186647A | ||||
| JP10330432A | ||||
| JP2000027810A | ||||
| JP2000143937A | ||||
| JP2001098024A |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Makoto Onda