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Title:
ANTIREFLECTION FILM FOR FARADAY ROTATOR AND OPTICAL ISOLATOR
Document Type and Number:
Japanese Patent JPH09265003
Kind Code:
A
Abstract:

To obtain an antireflection film having low reflectance and excellent in stickiness and wear resistance by vapor-depositing and laminating an oxide such as Al2O3, TiO2 or ZrO2 on a Faraday rotator made of a garnet single crystal and further vapor-depositing and laminating SiO2 on the resultant laminated structure.

A cleaned Faraday rotator 1 made of a garnet single crystal is irradiated with oxygen ions in a chamber 2, gaseous oxygen is introduced into the chamber 2 and granular Al2O3, TiO2, ZrO2, Ta2O5, HfO2 or Y2O3 5 packed in a crucible 4 is evaporated with an electron gun 6 to form a film of the oxide on the rotator 1 by vapor deposition in a proper optical thickness. The introduction of gaseous oxygen is then stopped and granular SiO2 9 packed in a crucible 8 is evaporated with an electron gun 10 to form an SiO2 film by vapor deposition in a proper optical thickness.


Inventors:
SHIONO YOSHIYUKI
WATANABE TOSHIAKI
TANNO MASAYUKI
RIYUUOU TOSHIHIKO
Application Number:
JP7604096A
Publication Date:
October 07, 1997
Filing Date:
March 29, 1996
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO
International Classes:
G02B27/28; G02B1/11; G02B1/115; (IPC1-7): G02B1/11; G02B27/28
Domestic Patent References:
JPH01253709A1989-10-11
JPH0256811A1990-02-26
JPH04230701A1992-08-19
JPH07172868A1995-07-11
JPS62123401A1987-06-04
Attorney, Agent or Firm:
Ryoichi Yamamoto (1 person outside)



 
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