Title:
ANTIREFLECTION FILM AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JPH11218603
Kind Code:
A
Abstract:
To produce an antireflection film at a higher yield than the conventional method in the state of satisfying all of strength of adhesion, optical reflectivity, electric resistance and total reflection transmittance.
This antireflection film 20 is formed by laminating silicon oxide (SiOx) films 21, silicon oxide (SiO2) films 23, 25 and indium tin oxide films 22, 24 in multiple layers on a base film 11. In such a case, the film thickness of the silicon oxide film 25 of the uppermost layer is formed thicker than the film thickness of the indium tin oxide film 24 right thereunder. The range of (x) of the SiOx film at the boundary with the base film is specified to 0.5 to 1.9.
Inventors:
ISHIKAWA HIROICHI
BARRET LIPPY
KOBAYASHI TOMIO
OOSHIMA YOSHIHIRO
MIHASHI SHINOBU
YAMASHITA NAOTAKA
HONJO TEIJI
KANEKO KOICHI
BARRET LIPPY
KOBAYASHI TOMIO
OOSHIMA YOSHIHIRO
MIHASHI SHINOBU
YAMASHITA NAOTAKA
HONJO TEIJI
KANEKO KOICHI
Application Number:
JP22956098A
Publication Date:
August 10, 1999
Filing Date:
August 14, 1998
Export Citation:
Assignee:
SONY CORP
International Classes:
G02B1/11; B32B7/02; B32B9/00; C03C17/34; C03C17/42; C23C14/08; C23C14/10; C23C14/56; C23C28/04; G02B1/10; G02B1/116; G02B1/14; G09F9/00; H01J9/24; H01J29/89; (IPC1-7): G02B1/11; B32B7/02; B32B9/00; C23C14/08; G02B1/10; G09F9/00; H01J9/20; H01J29/88
Attorney, Agent or Firm:
Kuninori Funabashi