Title:
ANTIREFLECTION FILM MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2002107938
Kind Code:
A
Abstract:
To provide an antireflection film material having a high etching selectivity ratio to a resist, that is, a high etching speed and to provide a pattern forming method by which an antireflection film layer is formed on a substrate using the antireflection film material.
The antireflection film material contains a compound having a substituent of formula (1) or (2) [where R1 is a 1-10C linear, branched or cyclic alkylene; R2-R10 are each H, a 1-20C linear, branched or cyclic optionally fluorine substituted alkyl, a 6-20C aryl or a 1-6C trialkylsilyl; 0≤m≤10; 0≤n≤10; 0≤o≤10 and 1≤(m+n+o)&h10].
Inventors:
HATAKEYAMA JUN
KANOU TAKESHI
HASEGAWA KOJI
WATANABE TAKESHI
KUBOTA TORU
KIYOMORI AYUMI
KANOU TAKESHI
HASEGAWA KOJI
WATANABE TAKESHI
KUBOTA TORU
KIYOMORI AYUMI
Application Number:
JP2000300650A
Publication Date:
April 10, 2002
Filing Date:
September 29, 2000
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/11; C07F7/08; C07F7/21; C08F30/08; C08K5/00; C08L1/08; C08L3/14; C08L5/00; C08L43/04; C08L63/00; C09K3/00; G02B1/04; G02B1/11; G02B1/111; G03F7/004; G03F7/075; G03F7/40; H01L21/027; (IPC1-7): G03F7/11; C07F7/08; C07F7/21; C08F30/08; C08K5/00; C08L1/08; C08L3/14; C08L5/00; C08L43/04; C08L63/00; C09K3/00; G02B1/04; G02B1/11; G03F7/004; G03F7/075; G03F7/40; H01L21/027
Attorney, Agent or Firm:
Ryoichi Yamamoto (3 others)