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Title:
APERTURE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH08195344
Kind Code:
A
Abstract:

PURPOSE: To provide an aperture which is free from warpage when it is irradiated with an electron beam, high in accuracy, and long in useful life by a method wherein a patterned part is provided at the thicknesswise center of the aperture in an aperture manufacturing process, where the aperture is used for drawing a pattern with an electron beam.

CONSTITUTION: The front side of a silicon wafer 1 is etched, then the rear side is etched nearly as deep as the front side, a required pattern is formed on an intermediate layer, and a conductive layer is formed on the front side.


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Inventors:
NOZUE HIROSHI
Application Number:
JP2094895A
Publication Date:
July 30, 1996
Filing Date:
January 13, 1995
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01L21/306; G03F1/20; G03F1/68; G03F7/20; H01J37/09; H01L21/027; (IPC1-7): H01L21/027; H01L21/306
Domestic Patent References:
JPS63229821A1988-09-26
JPS62216327A1987-09-22
Attorney, Agent or Firm:
Asato Kato



 
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