Title:
APPARATUS FOR EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPS5618415
Kind Code:
A
Abstract:
PURPOSE:To grow a uniform epitaxial layer by arranging many wafers in the longitudinal direction in a horizontal reacting tube, providing a plurality of reacting- gas introducing holes around the wafers, and sequentially supplying the gas into said introducing holes. CONSTITUTION:Wafers 7 are placed one by one on both sides on disk shaped susceptors 31 which are provided in a horizontal reacting tube 1, with an equal distance being provided inbetween. A plurality of gas introducing holes 4 are provided around said susceptors 31 with an equal distance being provided, and supply valves 10 are attached to the gas introducing holes 4, respectivly. The supply valves 10 are opened and closed sequentially, thereby the gas is supplied into the reacting tube 1. For example, the valves are sequentially opened and closed at every 0.5-4.0sec. In this method, since the gas stream is circulated, a mechanism to rotate the wafers 7 is not required, and the apparatus wherein hermetical sealing is readily made and the diameter of the reacting tube is small can be obtained.
Inventors:
ASAKA NOBUYUKI
Application Number:
JP9437379A
Publication Date:
February 21, 1981
Filing Date:
July 24, 1979
Export Citation:
Assignee:
SANYO ELECTRIC CO
TOKYO SANYO ELECTRIC CO
TOKYO SANYO ELECTRIC CO
International Classes:
C30B25/14; C23C16/455; H01L21/205; H01L21/31; C23C16/44; (IPC1-7): C30B25/02; H01L21/31