APPARATUS FOR EVALUATING INHERENT CHARACTERISTIC OF ADDITIVE ON GROWTH IN ELECTROLYTIC PLATING, ELECTROLYTIC PLATING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Japanese Patent JP2004217997

A

To solve a problem in electrolytic plating that unless a semiconductor substrate is immersed in a plating bath and copper of the main material is actually deposited, the balance and the controllability of various additives can not be determined.

This evaluating apparatus has a first graph-making means for plotting variations of precipitation quantity corresponding to variations in a rotation speed with respect to additive concentrations; a second graph-making means for approximating a curve of each additive concentration in the produced graph into two straight lines in regions of the low rotation speed and a high rotation speed, determining an intersection point of the two straight lines, plotting the precipitation quantity corresponding to the rotation speed on every additive concentration, and approximating the points into a straight line to make the graph; and a means for calculating a gradient of the straight line obtained by the above means as the inherent characteristic value of the additive, arranged in a CVS (cyclic voltammetric stripping) instrument.

KAMIYOSHI GOJI
SHIMIZU NORIYOSHI
NAKAMURA TOMOJI

JP2003006155A

August 05, 2004

January 14, 2003

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FUJITSU LTD

G01N33/00; C25D7/12; C25D21/12; C25D21/14; G01N27/48; H01L21/288; H01L21/3205; (IPC1-7): C25D21/14; C25D7/12; C25D21/12; G01N27/48; G01N33/00; H01L21/288; H01L21/3205

Kenji Doi
Hayashi Tsunetoku

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