PURPOSE: To improve the reliability and the yield of semiconductor integrated circuit devices by continually forming Al films or Al alloy films after forming a bimetal film without opening the inside of the sputter chamber to the atmosphere, thereby eliminating the formation of a spontaneous oxide film.

CONSTITUTION: A wafer 13 heated by a preheating chamber 16 is conveyed by a belt transfer mechanism 18 to a sputter chamber 11. The wafer 13 is set on the peripheral surface of a wafer holder drum 12. The wafer 13 is made to face a sputter electrode 14 by rotation of the drum 12. On the diffusion layer formed on the wafer 13, a high-melting point metal silicide which is a barrier metal is formed. Without opening the inside of the sputter chamber 11 to the atmosphere, the wafer 13 is made to face another sputter electrode 15 by rotation of the drum 12. An Al-Si film is formed on the high-melting point metal silicide of the wafer 13. With this, no spontaneous oxide film is formed, whereby the reliability and the yield of semiconductor integrated circuit devices are accomplished.