Title:
APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2018087098
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal, capable of improving temperature uniformity in the circumferential direction.SOLUTION: The apparatus for manufacturing a silicon carbide single crystal includes: a furnace core tube having the inner surface and the outer surface on the side opposite to the inner surface and having an open hole opened to the inner surface and the outer surface; a crucible surrounded by the inner surface; and a heating element constituted so as to surround the crucible and pass a current and including an annular part surrounding the crucible and a joint part connected to the annular part and arranged in the side of the open hole. In a cross section perpendicular to the direction passing the current, a value obtained by dividing the minimum of the cross sectional area of the joint part by the minimum of the cross-sectional area of the annular part is less than 2.5.SELECTED DRAWING: Figure 1
Inventors:
SAKURADA TAKASHI
TAKASUKA EIRYO
MISHIMA HIDEHIKO
TAKASUKA EIRYO
MISHIMA HIDEHIKO
Application Number:
JP2016230071A
Publication Date:
June 07, 2018
Filing Date:
November 28, 2016
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/36; C30B23/06; F27B14/06
Attorney, Agent or Firm:
Fukami patent office
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