Title:
APPARATUS FOR MEASURING LEAK CURRENT OF INSULATING FILM OF SEMICONDUCTOR APPARATUS
Document Type and Number:
Japanese Patent JPH1152006
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To measure the leak current of the insulating film of a semiconductor apparatus in a simple constitution highly accurately. SOLUTION: An insulating film constituting an input capacitor C1 is connected to the gate of a MOSFET, and a feedback capacitor C2 is connected between the gate and source. An initial threshold value Vth0 of the MOSFET (in a state without a leak current running) is measured, and a potential at a drain, the source and a substrate is set to be 0. A predetermined input voltage Vin is supplied for a predetermined time T to the gate through the insulating film. A leak current is stored at a stray capacity C0 of the MOSFET. After the time T has passed, a threshold value Vth1 of the MOSFET is measured, and a leak current I is operated according to I=(Vth1-Vin0)×C1/T. The feedback capacitor C2 may be eliminated because it can be substituted with the stray capacity C0. A suitable amplifying means having a high input impedance can be used in place of the MOSFET.
Inventors:
MURAKAMI TOMOMI
Application Number:
JP20807997A
Publication Date:
February 26, 1999
Filing Date:
August 01, 1997
Export Citation:
Assignee:
SUMITOMO METAL IND
International Classes:
G01R31/26; H01L21/66; (IPC1-7): G01R31/26; H01L21/66
Attorney, Agent or Firm:
Kazuo Shamoto (5 outside)