Title:
APPARATUS AND METHOD FOR FORMING PHASE CHANGE LAYER AND METHOD OF MANUFACTURING PHASE CHANGE MEMORY DEVICE UTILIZING THE SAME
Document Type and Number:
Japanese Patent JP2010059546
Kind Code:
A
Abstract:
To provide an apparatus and a method for forming a phase change layer and a method of manufacturing a phase change memory device utilizing the same.
Regarding an apparatus and a method for forming a phase change layer and a method of manufacturing a phase change memory device utilizing the same, a source material is supplied to a chamber, and purged from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material. Thus, an excellent phase change layer can be formed according to a compositional distribution by desired composition and thickness.
Inventors:
FUJITA TAKEHIKO
IM DONG-HYUN
BAE BYOUNG JAE
KIN DOKYO
CHO SUNG-LAE
LEE JIN-IL
SEO JUHYUNG
PARK HYE-YOUNG
IM DONG-HYUN
BAE BYOUNG JAE
KIN DOKYO
CHO SUNG-LAE
LEE JIN-IL
SEO JUHYUNG
PARK HYE-YOUNG
Application Number:
JP2009201528A
Publication Date:
March 18, 2010
Filing Date:
September 01, 2009
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
TOKYO ELECTRON LTD
TOKYO ELECTRON LTD
International Classes:
C23C16/44; H01L27/105; H01L45/00
Domestic Patent References:
| JP2007056369A | 2007-03-08 | |||
| JP2006054432A | 2006-02-23 | |||
| JP2009536986A | 2009-10-22 | |||
| JP2007186784A | 2007-07-26 |
Foreign References:
| US20070054475A1 | 2007-03-08 | |||
| WO2007133837A2 | 2007-11-22 |
Attorney, Agent or Firm:
Masatake Shiga