Title:
APPARATUS AND METHOD FOR FORMING SILICON NITRIDE FILM
Document Type and Number:
Japanese Patent JP3415491
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enhance step coverage and raise the film forming rate.
SOLUTION: A film forming method for forming a silicon nitride film on the surface of a work by chemical vapor deposition and a film forming apparatus are provided. The apparatus comprises a processing chamber 8 capable of being evacuated, a holder 10 for holding a work in the chamber 8, a gas feed system 20 for feeding at least silane gas, dichlorosilane gas and ammonia gas at controlled flow rates into the chamber 8 and a means 32 for heating the work to a prescribed temp., thereby feeding monosilane gas, dichlorosilane gas and ammonia gas as film forming gases from nozzles 22, 24, 26A, 26B, respectively. Film formation by the CVD method, using the three kinds of film forming gases, enhances the film forming rate, while making it realizable to have a silicon nitride film form at a satisfactory step coverage and uniformity in the film thickness.
Inventors:
Tatsuya Usami
Ooto Hikariichi
Takeshi Kumagai
Atsushi Tohara
Toshitake Tsuda
Ooto Hikariichi
Takeshi Kumagai
Atsushi Tohara
Toshitake Tsuda
Application Number:
JP17785699A
Publication Date:
June 09, 2003
Filing Date:
June 24, 1999
Export Citation:
Assignee:
NECエレクトロニクス株式会社
東京エレクトロン株式会社
東京エレクトロン株式会社
International Classes:
H01L21/31; H01L21/318; (IPC1-7): H01L21/318; H01L21/31
Domestic Patent References:
| JP61198734A |
Attorney, Agent or Firm:
Suzuki Akio
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