Title:
APPARATUS AND METHOD FOR GROWING CRYSTAL
Document Type and Number:
Japanese Patent JP2019147698
Kind Code:
A
Abstract:
To provide an apparatus and method for growing a crystal, capable of reducing rapid change in growth rate caused by temperature fluctuation in an electric furnace especially in the growth of a straight body part during crystal growth to suppress poly-crystallization and reducing the isothermal change of a crystal melting point by promoting the discharge of solidification latent heat to suppress poly-crystallization and crystal deformation due to dislocation integration, etc., and improve a single crystallization rate.SOLUTION: The apparatus for growing a crystal comprises a crucible capable of storing and holding a raw material melt; a heating element having the same material as the crucible and provided on the outside of the outer surface of the crucible; and a high frequency induction coil surrounding the crucible and heating the crucible and the heating element by high frequency induction heating.SELECTED DRAWING: Figure 3
Inventors:
KITAGAWA TAIZO
Application Number:
JP2018032011A
Publication Date:
September 05, 2019
Filing Date:
February 26, 2018
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C30B15/00; C30B29/28; C30B29/30; F27B14/14; F27D11/06
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito