Title:
APPARATUS AND METHOD FOR PROCESSING RESIST DEVELOPMENT, AND APPARATUS AND METHOD FOR PROCESSING SURFACE
Document Type and Number:
Japanese Patent JP3861798
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and method for processing resist development, and an apparatus and method for processing surface precisely with lens dispersion and finely processing resist development within a short period of time by use of supercritical fluid such as carbon dioxide or the like which does not require waste processing facility for a chemical liquid.
SOLUTION: The development chamber houses a resist substrate having a resist after exposure on the substrate and develops the resist after exposure by the use of the developing solvent comprising the supecritical fluid. The resist development processing apparatus has the supercritical fluid container containing the supercritical fluid connected to the development chamber through a valve.
Inventors:
Hisayuki Takasu
Miyazawa Koichi
Toru Iwatani
Miyazawa Koichi
Toru Iwatani
Application Number:
JP2002334781A
Publication Date:
December 20, 2006
Filing Date:
November 19, 2002
Export Citation:
Assignee:
Hitachi High-Tech Science Systems Co., Ltd.
International Classes:
G03F7/30; H01L21/027; G03D3/00; G03F7/32; (IPC1-7): H01L21/027; G03F7/30; G03F7/32
Domestic Patent References:
| JP2003122024A | ||||
| JP2035458A | ||||
| JP7284739A | ||||
| JP2000091180A | ||||
| JP9139374A | ||||
| JP1220828A |
Attorney, Agent or Firm:
Yukihiko Takada
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