To provide a method of producing an aluminum nitride single crystal using a sublimation method, capable of preventing occurrence of defects in the single crystal and of efficiently producing the crystal with good quality and large diameter.
The graphite crucible 4 which is disposed on the lower part in a heating furnace body 2 has on its inner face, a coated film 5 comprising the nitride of at least one material selected from hafnium, niobium, zirconium, tungsten, vanadium, molybdenum, rhenium, iridium, ruthenium and osmium. Since such a coated film 5 is stable even at high temperatures of ≥2,000°C and also chemically stable to sublimation gases (Al, N2), the aluminum nitride single crystal grown by using the gas generated from the graphite crucible can be prevented from occurrence of defects, thus efficiently producing the single crystal with good quality and large diameter.
KAMATA HIROYUKI
NAOE KUNIHIRO
MIMURA SHOJI
SANADA KAZUO
ICHINOSE NOBORU
MIYAZAWA SHINTARO
UNIV WASEDA
Iwa Saki Kokuni
Kawamata Sumio
Shunichi Takahashi
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