Title:
APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH05254982
Kind Code:
A
Abstract:
PURPOSE:To provide the apparatus and method for producing the single crystal which can yield the high-purity single crystal by preventing the deposition of SiOx on the edges of quartz crucibles and in a chamber and the deformation, etc., of the inner crucible generated during the initial melting of raw materials with the apparatus for producing the semiconductor single crystal by combining a continuous charge method and a double crucible method. CONSTITUTION:The inner crucible 4, a gas capturing cylinder 6 and a discharge pipe 8 are made into an freely vertically movable integral structure. The bottom end of the inner crucible 4 is immersed into a melt to separate the gaseous phase in a single crystal growing part and the gaseous phase at the bottom end of a raw material supply pipe 11, by which the intrusion of impurities into the single crystal growing part is prevented. The SiOx is discharged together with an inert gas via the discharge gas 8 from a gas capturing pipe 7 formed of the inner crucible 4 and the gas capturing cylinder 6. The raw materials are melted only by the outer crucible 2 by rising the inner crucible 4, etc., at the time of the initial melting of the raw materials. The high-purity single crystal is obtd. by the above-mentioned improvement.
Inventors:
Toyoshi Iwagiri
Masato Imai
Masato Imai
Application Number:
JP8788192A
Publication Date:
October 05, 1993
Filing Date:
March 11, 1992
Export Citation:
Assignee:
Komatsu Electronic Metal Co., Ltd.
International Classes:
C30B15/00; C30B15/02; C30B29/06; H01L21/208; (IPC1-7): C30B15/00; C30B15/02; C30B29/06; H01L21/208